Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

摘要

We present a detailed x-ray diffraction study of the strain in InAs/GaSbsuperlattices grown by molecular beam epitaxy. The superlattices were grownwith either InSb or GaAs interfaces. We show that the superlattice morphology,either planar or nanostructured, is dependent on the chemical bonds at theheterointerfaces. In both cases, the misfit strain has been determined for thesuperlattice layers and the interfaces. We also determined how the magnitudeand sign of this strain is crucial in governing the morphology of thesuperlattice. Our analysis suggests that the growth of self-assemblednanostructures may be extended to many systems generally thought to have toosmall a lattice mismatch.